Walts TEG Wafers and Test Elements Daisy-Chain Test Die & Wafers

Practical Components is the exclusive distributor of Walts Co., LTD In the U.S.A. Walts provides next-generation assembly technology for semiconductors with leading-edge technologies. As the de facto standard, Walts products are used in research and development sites worldwide.

Their well experienced designers can also custom-make TEG (Test Element Groups) to better suit your needs. A wide variety of film sputtering and deposition, back grinding, dicing, bump forming, assembling and analysis are available.

Material	Au		Solder		Cu				Ni		Electroless Ni/Au	Function
					-	+SnAg	+Ni +SnAg	+Ni +Au	-	+SnAg
Form	PLATE	STUD	PLATE	MOUNT	PLATE	PLATE	PLATE	PLATE	PLATE	PLATE	PLATE	---
Image												---
MB50				-							-	Daisy
MB60				-							-	Daisy
MB80				-							-	Daisy
MB130				-								Daisy
CC40		-		-							-	Daisy
IP40	-	-	-	-								Daisy/Vernier Bump Short/ Breakdown Voltage
IP40A	-	-	-	-			-	-	-	-
CC80				-							-	Daisy
IP80	-	-	-	-								Daisy
CC80TSV	-	-	-	-	-			-	-	-	/	TSV
CC80Mark II				-							-	Daisy/Migration
CC80Mark II WM	-	-	-	-			-	-	-	-		Daisy/Migration
WM40-0101	-	-	-	-			-	-	-	-	-	---
CC80Mark III	-	-	-	-			-	-	-	-		Daisy/Migration
WM40-0102	-	-	-	-	-		-	-	-	-	-	Daisy
CC80Mark IV	-	-	-	-			-	-	-	-	-	Daisy
IP80Mark IV	-	-	-	-	-	-	-	-	-	-		Daisy
FC150LC	-	-	-	-			-	-	-	-	-	Daisy
FC150(Si)	-	-										Daisy
FC150(Glass)	-	-										---
FC150SC	-	-										Daisy
FC200(Si)	-	-										Daisy
FC200(Glass)	-	-										---
FC200SC	-	-										Daisy
FC500G	-	-	-	-			-	-	-	-	-	---
FBW	-	-	-	-				-	-	-	-	---
WLP	-	-	-		-	-	-	-	-	-	-	Daisy
MC03		-	-	-			-	-	-	-	-	Daisy
ME	-	-	-	-	-	-	-	-	-	-	-	Migration
STAC				-							-	Stress/ Thermal/ HeatGeneration
STAC150FA	-	-	-	-							-
STAC300FA	-	-	-	-							-
HPW				-							-	Thermal/ Heat Generation
HPW150FA	-	-	-	-							-
HPW300FA	-	-	-	-							-
HPWTSV	-	-	-	-	-		-	-	-	-		TSV
LCD30		-		-								Daisy/ Breakdown Voltage
PWB	-	-	-	-	-	-	-	-	-	-	-	Bondability

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Cu Pillar Bump TEG	Solder Bump TEG	Electroless Plating Bump TEG

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WALTS-TEG MB50-0101JY

Specification Type-A Type-B Type-C (Glass) Wafer Size Φ 8 inch Φ 8 inch Φ 8 inch Wafer Thickness 725±25µm 725±25µm 700±70µm Chip Size 7.3mm■ 7.3mm■ 7.3mm■ Pad Pitch 50µm 50µm 50µm Function Daisy Chian Daisy Chian - Bump Size - Au: 30µm■ Cu: 30µm■ Cu: Φ25µm Cu: 30µm■ Cu: Φ25µm Bump Height - (Cu30µm+SnAg15µm) (Cu30µm+SnAg15µm) Number of Pad 544 pads/chip 544 pads/chip - Number of Chip 478 chips/wafer 478 chips/wafer 478 chips/wafer Polyimide (Option)  Evaluation KIT WALTS-KIT MB50-0102JY_NCR [Standard] WALTS-KIT MB50-0104JY_CR [Standard] WALTS-KIT MB50-0105JY_CR [Standard] WALTS-KIT MB50-0102JY_NCR [MAP] WALTS-KIT MB50-0103JY_CR [MAP] WALTS-KIT MB50-0104JY_CR [MAP] Return To Top

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WALTS-TEG MB60-0101JY

Specification MB60-0101JY Wafer Size Φ 8 inch Wafer Thickness 725±25µm Chip Size 7.3mm■ Pad Pitch 60µm Function Daisy Chian Bump Size - Bump Height - Number of Pad 448 pads/chip Number of Chip 478 chips/wafer Polyimide (Option) Evaluation KIT --- Return To Top

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WALTS-TEG MB80-STG0101JY

Specification TYPE-A  TYPE-B Wafer Size Φ 8 inch Φ 8 inch Wafer Thickness 725±25µm 725±25µm Chip Size 7.3mm■ 7.3mm■ Pad Pitch 80µm Staggerd 80µm Staggerd Function Daisy Chian Daisy Chian Bump Size - 38µm■ Bump Height (Wire Bonding) (Cu30µm+SnAg15µm) Number of Pad 648 pads/chip 82 pads x 4 (Outer Line) 80 pads x 4 (Innter Line) 648 pads/chip 82 pads x 4 (Outer Line) 80 pads x 4 (Innter Line) Number of Chip 478 chips/wafer 478 chips/wafer Polyimide (Option) Evaluation KIT WALTS-KIT CC80-0104JY (Model IV) Return To Top

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WALTS-TEG AS8R

Specification AS8R Wafer Size Φ 8 inch Wafer Thickness 725±25µm Chip Size 3.5 mm■ Pad Pitch 120µm Function Daisy Chian Bump Size - Bump Height - Number of Pad 96 pads/chip (Outer Line) 88 pads/chip (Inner Line) Number of Chip 2266 chips/wafer Polyimide (Option) Evaluation KIT --- Return To Top

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WALTS-TEG MB130-STG0101JY WALTS-TEG MB130A-STG0101JY

Specification MB130 MB130A TYPE-A TYPE-B  Wafer Size Φ 6 inch Φ 6 inch Φ 8 inch Wafer Thickness 550±25µm 550±25µm 725±25µm Chip Size 2.13 mm■ 2.13 mm■ 2.13 mm■ Pad Pitch 130µm 130µm 130µm Function Daisy Chian Daisy Chian Daisy Chian Bump Size - 70µm■ - Bump Height (Wire Bonding) (Au Stud Bump) (Cu30µm+SnAg15µm) (Wire Bonding) (Au Stud Bump) Number of Pad 108 pad/chip 15 pads x 4 (outer Line) 12 pads x 4 (Inner Line) 108 pad/chip 15 pads x 4 (outer Line) 12 pads x 4 (Inner Line) 108 pad/chip 15 pads x 4 (outer Line) 12 pads x 4 (Inner Line) Number of Chip 3300 chips/wafer 3300 chips/wafer 6060 chips/wafer Polyimide (Option) Evaluation KIT --- ---  Return To Top

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WALTS-TEG MB6020-0102JY

Specification MB6020-0102JY Wafer Size Φ 8 inch Wafer Thickness 725±25µm Chip Size 3.0 mm■ Pad Pitch 60 / 55 / 50 / 45 / 40 / 35 / 30 / 25 / 20 µm Function Daisy Chian Bump Size - Bump Height - Number of Pad (40x4) (40x4) (38x4) (38x4) (36x4) (34x4) (30x4) (26x4) (18x4) Number of Chip 3016 chips/wafer Polyimide (Option) --- Evaluation KIT --- Return To Top

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WALTS-TEG CC40-0101JY

Specification CC40-0101JY Wafer Size Φ 8 inch Wafer Thickness 725±25µm Chip Size 7.3 mm■ Pad Pitch Model I: 40µm Staggered + 40µm Full Area Model II: 40µm Staggered Function Daisy Chian Bump Size Model I: 22µm Model II: 22µm Bump Height (Cu15µm+SnAg10µm) Number of Pad Model I: 29576 pads/chip Model II: 1352 pads/chip Number of Chip 478 chips/wafer Polyimide (Option) --- Evaluation KIT WALTS-TEG IP40-0101JY (Silicon Interposer) WALTS-TEG IP40A-0101JY (Silicon Interposer) Return To Top

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WALTS-TEG IP40-0101JY

Specification IP40-0101JY(ModelI / ModelII) Wafer Size Φ 8 inch Wafer Thickness 725±25µm Chip Size 10.0 mm■ Pad Pitch (1) 40µm pitch Full area + Staggered (Model I) 40µm pitch Staggered (Model II) (2) 250µm pitch Periphera (Outer Pad) Function Daisy Chian Bump Short Check Vernier Breakdown Voltage Check between the Bumps Bump Size --- Bump Height --- Number of Pad Model I: (1) 29576 pads/chip (2) 124 pads/chip (Outer Pad) Model II: (1) 1352 pads/chip (2) 124 pads/chip (Outer Pad) Number of Chip 228 chips/wafer Polyimide (Option) --- Evaluation KIT --- Return To Top

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WALTS-TEG IP40A-0101JY

Specification IP40A-0101JY(ModelI) Wafer Size Φ 12 inch Wafer Thickness 775±25µm Chip Size 10.0 mm■ Pad Pitch (1) 40µm pitch Full area + Staggered (Model I) (2) 250µm pitch Periphera (Outer Pad) Function Daisy Chian Bump Short Check Vernier Breakdown Voltage Check between the Bumps Bump Size --- Bump Height --- Number of Pad Model I: (1) 29576 pads/chip (2) 124 pads/chip (Outer Pad) Number of Chip 616 chips/wafer Polyimide (Option) --- Evaluation KIT --- Return To Top

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WALTS-TEG CC80-0101JY

Specification CC80-0101JY Wafer Size Φ 8 inch Wafer Thickness 725±25µm Chip Size 7.3 mm■ Pad Pitch 80µm Staggered (Periphera) 300µm Full Area (Center Core) Function Daisy Chian Bump Size Model I: 38µm■ or Φ42µm Model II: 38µm■ Model III: 38µm■ Model IV: 38µm■ Bump Height (Cu30µm+SnAg15µm) Number of Pad Model I: 1048 pads/chip Model II: 904 pads/chip Model III: 728 pads/chip Model IV: 648 pads/chip Number of Chip 478 chips/wafer Polyimide (Option) Evaluation KIT WALTS-TEG IP80-STG0101JY (Silicon Interposer) WALTS-KIT CC80-0104JY Return To Top

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WALTS-TEG IP80-0101JY

Specification IP80-0101JY Wafer Size Φ 8 inch Wafer Thickness 725±25µm Chip Size 10.0 mm■ Pad Pitch (1) 80µm Staggered (Inner Pad) (2) 300µm Full Area (Center Core) (3) 250µm Periphera (Outer Pad) Function Daisy Chian Bump Size - Bump Height - Number of Pad (1) 648 pads/chip (2) 400 pads/chip (3) 124 pads/chip Number of Chip 228 chips/wafer Polyimide (Option) Evaluation KIT --- Return To Top

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WALTS-TEG CC80TSV-0101JY

Specification CC80TSV-1 CC80TSV-2 Wafer Size Φ 8 inch Φ 8 inch Chip Thickness 100µm 100µm Chip Size 7.3 mm■ 7.3 mm■ Pad Pitch 80µm Staggered (Periphera) 300µm Full Area (Center Core) 80µm Staggered (Periphera) 300µm Full Area (Center Core) TSV Hole Diameter Φ40µm Φ40µm Top Side Electrode Electroless Ni/Au Cu+SnAg  Bump Size Φ48µm(Option: Φ42µm) 38µm■ (Option: Φ42µm)  Bump Height (8~12µm) (Cu20µm+SnAg15µm) Bottom Side Electrode Electroless Ni/Au Electroless Ni/Au  Bump Size Φ48µm(Option: Φ42µm) Φ48µm(Option: Φ42µm)  Bump Height (8~12µm) (8~12µm) Number of Chip 478 chips/wafer 478 chips/wafer Evaluation KIT WALTS-TEG CC80-0101JY WALTS-TEG IP80-0101JY (Silicon Interposer) Return To Top

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WALTS-TEG CC80MarKII-0101JY

Specification CC80MarkII-0101JY [STD] Wafer Size Φ 8 inch Wafer Thickness 725±25µm Chip Size 12.0 mm■ Pad Pitch 80µm Staggered (Periphera) 200µm Full Area (Center Core) Function Daisy Chain & Migration Bump Size Φ31µm Bump Height (Cu30µm+SnAg15µm) Number of Pad 1660 pads/chip (Periphera) 2916 pads/chip (Center Core) Number of Chip 177 chips/wafer Polyimide (Option) --- Evaluation KIT WALTS-KIT CC80MarkII-0201JY Return To Top

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WALTS-TEG CC80MarkII WM-0101JY

Specification CC80MarkII WM-0101JY ※Base Wafer: WALTS TEG CC80MarkII-0101JY  Wafer Size 8inch  Wafer Thickness 100µm Chip Size 10 mm x 8 mm Function Daisy Chain & Migration(Top Side) Top Side Electrode Cu Pillar  Bump Size Φ31µm  Bump Height (Cu 20µm + SnAg 15µm) Bottom Side Electrode Cu Post  Bump Size Φ26µm Bump Pitch ① 40µm ②300µm   Number of Bump ①1200 bumps ② 714 bumps   Bump Height (Cu 6µm) Number of Chip 177 chips/wafer Evaluation KIT WALTS-KIT CC80MarkII-0201JY WALTS-TEG WM40-0101JY Return To Top

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WALTS-TEG WM40-0101JY

Specification WM40-0101JY Wafer Size 8inch  Wafer Thickness 50µm Chip Size 10 mm x 8 mm Function --- Top Side Electrode Cu Pillar Bump Size Φ20µm Bump Height (Cu15µm + SnAg8µm) Bump Pitch ① 40µm ②300µm Number of Bump ①1200 bumps ② 714 bumps Bottom Side Electrode Cu Post Bump Size Φ26µm Bump Height (Cu 6µm) Bump Pitch ① 40µm ②300µm Number of Bump ①1200 bumps ② 714 bumps Number of Chip 312 chips/wafer Evaluation KIT WALTS-KIT CC80MarkII-0201JY Return To Top

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WALTS-TEG CC80MarkIII-0101JY

Specification CC80MarkIII-0101JY Wafer Size 6inch  Wafer Thickness 100µm or 350µm Chip Size 12.0 mm x 12.0 mm Function Daisy Chain & Migration(Top Side) Daisy Chain (Bottom Side) Top Side Electrode Cu Pillar Bump Size Φ31µm Pad Pitch ① 80µm Three Rows Staggered (Peripheral) ② 200µm Full Area(Center Core) Number of Bump/Pad ① 1660bumps/1660pads (Peripheral) ② 2916bumps/2916pads(Center Core) Bottom Side Electrode Electroless Ni/Au Bump Size Φ20µm Bump Pitch ① 40µm (Center Core) ② 300µm (Peripheral) ③ 550µm (Outer Pad) Number of Bump ① 120 pads (Center Core) ② 714 pads (Peripheral) ③ 40 pads (Outer Pad) Number of Chip 89 chips/wafer Evaluation KIT WALTS-KIT CC80MarkII-0201JY WALTS-TEG WM40-0102JY Return To Top

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WALTS-TEG WM40-0102JY

Specification WM40-0102JY Wafer Size 8inch Wafer Thickness 725±25µm Chip Size 10 mm x 8 mm Function Daisy Chain Electrode Cu Pillar  Bump Size Φ20µm Bump Height (Cu15µm + SnAg8µm) Bump Pitch ① 40µm ②300µm Number of Bump ①1200 bumps ② 714 bumps Number of Chip 312 chips/wafer Evaluation KIT WALTS-KIT CC80MarkII-0201JY Return To Top

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WALTS-TEG CC80MarkIV-0101JY

Specification CC80MarkIV-0101JY Wafer Size 8inch Wafer Thickness 725±25µm  Chip Chip A Chip B Chip Size 6.0 mm x 10.0 mm 4.0 mm x 10.0 mm  Pad Pitch ① 40µm [10Row] x50µm [192Row] (Peripheral) ② 80µm staggered [3Row] (Center core) ③ 150µm Min. Lattice Function Daisy Chain Electrode Cu Pillar Bump Size Φ25µm Number of Bump/Pad ①1920bumps/1920pads ② 687 bumps/ 687 pads ③1743bumps/1743pads ①1920bumps/1920pads ② 531 bumps/ 531 pads ③ 978 bumps/ 978 pads Number of Chip Chip A: 228chips/wafer Chip B: 228chips/wafer Evaluation KIT WALTS-TEG IP80MarkIV-0101JY (Sillicon Interposer) Return To Top

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WALTS-TEG IP80MarkIV-0101JY

Specification IP80MarkIV-0101JY Wafer Size 8inch Wafer Thickness 725±25µm Chip Size 15.0 mm x 15.0 mm  Pad Pitch ① 40µm [10Row] x50µm [192Row] x2 (Peripheral) ② 80µm staggered [3Row] (Center core) ③ 150µm Min. Lattice ④ 300µm (Staggered) Function Daisy Chain Electrode Electroless Ni/Au plating Bump Size ①27µm ②27µm ③27µm ④141µm■ Number of Bump/Pad ①3840bumps/3840pads ②1172bumps/1172pads ③2721bumps/2721pads ④328bumps/328pads Number of Chip 97 chips/wafer Evaluation KIT --- Return To Top

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WALTS-TEG FC150LC-0101JY

Specification FC150LC-0101JY Wafer Size Φ 12 inch Wafer Thickness 775±25µm Chip Size 25.0mm■ Pad Pitch 150 µm (Area) Function Daisy Chian Bump Size Φ75µm Bump Height Cu pillar (Cu30µm+SnAg15µm) Number of Pad 25921 pads/chip (161x161) Number of Chip 89 chips/wafer Polyimide (Option) Evaluation KIT WALTS-KIT FC150LC-0302JY Return To Top

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WALTS-TEG FC150JY [Si-Type]

Specification Type-A Type-B Wafer Size Φ 8 inch Φ 8 inch Wafer Thickness 725±25µm 725±25µm Chip Size 10.0mm■ 10.0mm■ Pad Pitch 150 µm (Area) 150 µm (Area) Function Daisy Chian Daisy Chian Bump Size Φ85µm Φ75µm Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30µm+SnAg15µm) Number of Pad 3721 pads/chip (61x61) 3721 pads/chip (61x61) Number of Chip 208 chips/wafer 208 chips/wafer Polyimide (Option) Evaluation KIT WALTS-KIT 01A150P-10-2 WALTS-KIT FC150-0103JY 2x2 WALTS-KIT FC150-0104JY 2x2 WALTS-KIT FC150R-0102JY 2x2 Return To Top

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WALTS-TEG FC150JY [Glass-Type]

Specification Type-A Type-B Wafer Size Φ 8 inch Φ 8 inch Wafer Thickness 700±70µm 700±70µm Chip Size 10.0mm■ 10.0mm■ Pad Pitch 150 µm (Area) 150 µm (Area) Function - - Bump Size Φ85µm Φ75µm Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30µm+SnAg15µm) Number of Pad 3721 pads/chip (61x61) 3721 pads/chip (61x61) Number of Chip 228 chips/wafer 228 chips/wafer Polyimide (Option) 208 chips/wafer 208 chips/wafer Evaluation KIT WALTS-KIT 01A150P-10-2 WALTS-KIT FC150-0103JY 2x2 WALTS-KIT FC150-0104JY 2x2 WALTS-KIT FC150R-0102JY 2x2 Return To Top

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WALTS-TEG FC150SCJY

Specification Type-A Type-B Wafer Size Φ 8 inch Φ 8 inch Wafer Thickness 725±25µm 725±25µm Chip Size 5.02mm■ 5.02mm■ Pad Pitch 150 µm (Area) 150 µm (Area) Function Daisy Chian Daisy Chian Bump Size Φ85µm Φ75µm Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30µm+SnAg15µm) Number of Pad 784 pads/chip (28x28) 784 pads/chip (28x28) Number of Chip 832 chips/wafer 832 chips/wafer Polyimide (Option) Evaluation KIT --- Return To Top

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WALTS-TEG FC200JY [Si-Type]

Specification Type-A Type-B Wafer Size Φ 8 inch Φ 8 inch Wafer Thickness 725±25µm 725±25µm Chip Size 10.0mm■ 10.0mm■ Pad Pitch 200µm (Area) 200µm (Area) Function Daisy Chian Daisy Chian Bump Size Φ100µm Φ90µm Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30µm+SnAg15µm) Number of Pad 2116 pads/chip (46x46) 2116 pads/chip (46x46) Number of Chip 228 chips/wafer 228 chips/wafer Polyimide (Option) Evaluation KIT WALTS-KIT 01A200P-10 WALTS-KIT 01A200P-10_C400 WALTS-KIT FC200-0101JY 2x2 WALTS-KIT FC200-0102JY 2x2 Return To Top

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WALTS-TEG FC200JY [Glass-Type]

Specification Type-A Type-B Wafer Size Φ 8 inch Φ 8 inch Wafer Thickness 700±70µm 700±70µm Chip Size 10.0mm■ 10.0mm■ Pad Pitch 200µm (Area) 200µm (Area) Function - - Bump Size Φ100µm Φ90µm Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30µm+SnAg15µm) Number of Pad 2116 pads/chip (46x46) 2116 pads/chip (46x46) Number of Chip 228 chips/wafer 228 chips/wafer Polyimide (Option)   Evaluation KIT WALTS-KIT 01A200P-10 WALTS-KIT 01A200P-10_C400 WALTS-KIT FC200-0101JY 2x2 WALTS-KIT FC200-0102JY 2x2 Return To Top

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WALTS-TEG FC200SCJY

Specification Type-A Type-B Wafer Size Φ 8 inch Φ 8 inch Wafer Thickness 725±25µm 725±25µm Chip Size 5.02mm■ 5.02mm■ Pad Pitch 200µm (Area) 200µm (Area) Function Daisy Chian Daisy Chian Bump Size Φ100µm Φ90µm Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30µm+SnAg15µm) Number of Pad 484 pads/chip (22x22) 484 pads/chip (22x22) Number of Chip 832 chips/wafer 832 chips/wafer Polyimide (Option) Evaluation KIT WALTS-KIT FC200SC-0202JY 2x3 WALTS-KIT FC200SC-0202JY 3x3 Return To Top

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WALTS-TEG FC500G-0101JY [Glass-Type]

Specification WALTS-TEG FC500G-0101JY [Glass Type] Wafer Size Φ 8 inch Wafer Thickness 700±70µm Chip Size 10.1mm■ Pad Pitch 500 µm Function - Bump Size Φ100µm Bump Height (Cu30µm+SnAg15µm) Number of Pad 40 pads/chip Number of Chip 240 chips/wafer Evaluation KIT --- Return To Top

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WALTS-TEG FBW200-0001JY WALTS-TEG FBW150-0001JY WALTS-TEG FBW130-0001JY WALTS-TEG FBW100-0001JY WALTS-TEG FBW80-0001JY

Specification FBW200 FBW150 FBW130 FBW100 FBW80 Wafer Size Φ 8 inch Φ 8 inch Φ 8 inch Φ 8 inch Φ 8 inch Wafer Thickness 725±25µm 725±25µm 725±25µm 725±25µm 725±25µm Bump Pitch 200µm 150µm 130µm 100µm 80µm Electrode Cu Pillar Cu Pillar Cu Pillar Cu Pillar Cu Pillar Bump Size Φ90µm Φ75µm Φ65µm Φ50µm Φ40µm  Bump Height (Max.60µm) (Max.60µm) (Max.60µm) (Max.60µm) (Max.50µm) Return To Top

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WLP TEG (0.4mm pitch & 0.3mm pitch)

Specification 0.4mm pitch BGA 0.3mm pitch BGA Wafer Size Φ 8 inch Φ 8 inch Wafer Thickness 400±20µm 400±20µm Chip Size 6.0mm■ 6.0mm■ BGA Pitch 400µm 300µm Function Daisy Chain Daisy Chain Electrode Ball Mounted Solder Bump Ball Mounted Solder Bump Pad Size (Φ227µm) (Φ177µm) Number of Pad 144 pins/chip 264 pins/chip Number of Chip 712 chips/wafer 712 chips/wafer Return To Top

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WLP TEG (Free Size Cut TEG: TEG0306,TEG0408,TEG0510)

Specification TEG0306 TEG0408 TEG0510 Wafer Size Φ 8 inch Φ 8 inch Φ 8 inch Wafer Thickness 400µm 400µm 400µm Cut Size (Min.) 600µm■ 800µm■ 1000µm■ Pad Pitch 300µm 400µm 500µm Function Daisy Chain Daisy Chain Daisy Chain Electrode  Ball Mounted Solder Bump  Ball Mounted Solder Bump Ball Mounted Solder Bump  Post Size 175µm 200µm 250µm Number of Chip 79257 chips/wafer 44161 chips/wafer 28212 chips/wafer Return To Top

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WALTS-TEG MC03-0101JY

Specification WALTS-TEG MC03-0101JY Wafer Size Φ 8 inch Wafer Thickness 725µm±25µm Chip Size 0.3mm■ 0.4mm■ 0.5mm■ Pad Pitch 120µm 220µm 320µm  Function Daisy Chain  Daisy Chain  Daisy Chain Pad Metal Size X: 65µm Y: 170µm X: 65µm Y: 270µm X: 65µm Y: 370µm Bump Size 40µm Bump Height Au(10µm) Number of Chip 149,216 chips/wafer 80,816 chips/wafer 26,604 chips/wafer  Evaluation KIT --- Return To Top

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WALTS-TEG ME0102JY [for Migration Test]

Specification WALTS-TEG ME0102JY Wafer Size Φ 12 inch Chip Size 20mmx25mm Chip Name Chip_10_15 Chip_20_25 Chip_30_35 Metal Height 5.5µm Facing Legth 3mm Line/Space 15µm/10µm 15µm/15µm 15µm/20µm 15µm/25µm 15µm/30µm 15µm/35µm Pitch 25µm 30µm 35µm 40µm 45µm 50µm Number of Chip 34 chips/wafer 40 chips/wafer 34 chips/wafer Return To Top

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WALTS-TEG STAC-0101JY [for Stress & Thermal Resistance Analysis]

Specification STAC-0101JY Wafer Size Φ 6 inch(Orientation Flat) Wafer Thickness 550±25µm Chip Size 3.0mm■ Pad Pitch 300µm Function Stress Analysis by Piezoresistance Thermal Analysis by Diode Heat Generarion by Resistance Electrode (Al Pad, Cu Pillar Bump, Solder Bump, Au Bump) Number of Pad 32 pads/chip Number of Chip 1596 chips/wafer Polyimide (Option) ＜Option＞ Back Side Metallization Evaluation KIT WALTS-KIT STAC-0201JY Return To Top

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WALTS-TEG STACTEG-150FA-0101JY WALTS-TEG STACTEG-300FA-0101JY

Specification STACTEG-150FA STACTEG-300FA *Base Wafer: WALTS-TEG STAC-0101JY Wafer Size Φ 6 inch (Orientation Flat) Φ 6 inch (Orientation Flat) Wafer Thickness 550±25µm 550±25µm Chip Size 3.0mm■ 3.0mm■ Pad Pitch 150µm 300µm Function Stress Analysis by Piezoresistance Thermal Analysis by Diode Heat Generarion by Resistance Stress Analysis by Piezoresistance Thermal Analysis by Diode Heat Generarion by Resistance Bump Size Φ110µm Φ110µm Bump Height (Ni5µm+SnAg75µm) (Cu50µm+SnAg10µm) Number of Pad 32 pads/chip 32 pads/chip Number of Bump 32 bumps + 253 Dummy bumps 32 bumps + 64 Dummy bumps Number of Chip 1596 chips/wafer 1596 chips/wafer Polyimide (Option) ＜Option＞ Back Side Metallization Back Side Metallization Evaluation KIT WALTS-KIT STAC-0201JY Return To Top

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WALTS-TEG HPW-0101JY [for Thermal Resistance Analysis at High Power]

Specification HPW-0101JY Wafer Size Φ 8 inch(Notch) Wafer Thickness 725±25µm Chip Size 3.0mm■ Pad Pitch 300µm Function Thermal Analysis by Diode Heat Generarion by Resistance Electrode (Al Pad, Cu Pillar Bump, Solder Bump, Au Bump) Number of Pad 32 pads/chip Number of Chip 2964 chips/wafer Polyimide (Option)  ＜Maximum Output＞ Max. 14.5W/Chip ＜Option＞ Back Side Metallization Return To Top

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WALTS-TEG HPWTEG-150FA-0101JY WALTS-TEG HPWTEG-300FA-0101JY

Specification HPWTEG-150FA HPWTEG-300FA *Base Wafer: WALTS-TEG HPW-0101JY Wafer Size Φ 8 inch(Notch) Φ 8 inch(Notch) Wafer Thickness 725±25µm 725±25µm Chip Size 3.0mm■ 3.0mm■ Pad Pitch 150µm 300µm Function Thermal Analysis by Diode Heat Generarion by Resistance Thermal Analysis by Diode Heat Generarion by Resistance Bump Size Φ110µm Φ110µm Bump Height (Ni5µm+SnAg75µm) (Cu50µm+SnAg10µm) Number of Pad 32 pads/chip 32 pads/chip Number of Bump 32 bumps + 253 Dummy bumps 32 bumps + 64 Dummy bumps Number of Chip 2964 chips/wafer 2964 chips/wafer ＜Option＞ Back Side Metallization Back Side Metallization Evaluation KIT --- Return To Top

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WALTS-TEG HPW TSV-0101JY

Specification HPW TSV-0101JY *Base Wafer: WALTS-TEG HPW-0101JY(SiN) Wafer Size Φ 8 inch(Notch) Wafer Thickness 100µm Chip Size 3.0mm■ Top Side Electrode Cu Pillar Bump Pitch 300µm Bump Size Φ100µm Bump Height (Cu50µm+SnAg10µm) Number of Bump 32 bumps + 64 Dummy bumps TSV Via Size Φ90µm Bottom Side  Electrode Electroless Ni/Au Plating Bump Pitch 300µm Bump Size Φ100µm Bump Height (8µm) Number of Bump 32 bumps Number of Chip 2964 chips/wafer Evaluation KIT --- Return To Top

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WALTS-TEG Thermal Chip

Specification Type-A Type-B Type-C Wafer Size Φ 5 inch Φ 5 inch Φ 5 inch Wafer Thickness 625µm 625µm 625µm Chip Size 3.2mm■ 1.6mm■ 0.8mm■ Pad Pitch any any any Function Fever resistance Fever resistance Fever resistance Bump Size - - - Bump Height - - - Number of Pad 20 pads/chip 12 pads/chip 8 pads/chip Number of Chip 655 chips/wafer 974 chips/wafer 1272 chips/wafer Polyimide (Option)  Evaluation KIT --- Return To Top

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WALTS-TEG LKWB120 (Low-k TEG)

Specification LKWB120 Wafer Size Φ 12 inch Wafer Thickness 775±25µm Chip Size 10.0 mm■ Pad Pitch 120 µm Staggered Function Daisy Chian,Comb tooth Capacitor,Serpentine Resistor,Interlayer Capacitor,Via Chain Bump Size - Bump Height - Number of Pad 616 pads/chip Number of Chip 636 chips/wafer Polyimide (Option) Evaluation KIT WALTS-KIT LKWB120 Return To Top

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WALTS-TEG LCD30-0101JY

Specification LCD30-0101JY Wafer Size Φ 6 inch Wafer Thickness 550±25µm Chip Size 15.1 mm x 1.6 mm Pad Pitch 30µm Function Daisy Chian Bump Size 20µmx100µm Bump Height any Number of Pad 726 pads/chip Number of Chip 530 chips/wafer Polyimide (Option) Evaluation KIT WALTS-KIT LCD30_ITO WALTS-KIT COF30 Return To Top

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WALTS-TEG PWB0101JY

Specification PWB0101JY Wafer Size Φ 6 inch Wafer Thickness 625±25µm Chip Size 6.0mm■ Pad Pitch - Function Bondability Check Bump Size - Bump Height - Number of Pad - Number of Chip - Polyimide (Option) --- Evaluation KIT --- Return To Top