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SIPOS-TEG SI0631 （for Micro Line Evaluation TEG）

Specifications
Wafer Size	8 inch
Wafer Thickness	725±25μm
Chip Size	20.0mm
Layer	Layer1: wiring layer
Metal Material	Cu
Cu Thickness	3 ~ 4μm
Number of Pad	56 pads
Pad Size	160μm
Measurement Pad Size	2.2mm
Number of Chip	57 chips/wafer
Evaluation Pattern	・Comb pattern Comb pattern L/S dimension ①L/S=10.0μm/10.0μm ②L/S=7.0μm/7.0μm ③L/S=5.0μm/5.0μm ④L/S=3.0μm/3.0μm ⑤ L/S=2.5μm/2.5μm ⑥ L/S=2.0μm/2.0μm ⑦ L/S=2.1μm/1.9μm ⑧ L/S=2.2μm/1.8μm ⑨ L/S=2.3μm/1.7μm ⑩ L/S=1.8μm/2.2μm *interdigital pattern length：2mm ・Wiring pattern for break check 3.0μm, 2.5μm, 2.0μm, 1.8μm(length: 2.0mm, 1.0mm)

Applications:
Chemical migration evaluation for resins etc.
Mainly used at material manufacturers.