SIPOS-TEG SI0631

Wafer Size	8 inch
Wafer Thickness	725±25μm
Chip Size	20.0mm■
Layer	Layer1: wiring layer
Metal Material	Cu
Cu Thickness	3～4μm
Number of Pad	36 pads
Pad Size	160μm■
Measurement Pad Size	2.2mm●
Number of Chip	57 chips
Evaluation Pattern	Comb pattern Comb pattern L/S dimension ① L/S=10.0μm/10.0μm ② L/S=7.0μm/7.0μm ③ L/S=5.0μm/5.0μm ④ L/S=3.0μm/3.0μm ⑤ L/S=2.5μm/2.5μm ⑥ L/S=2.0μm/2.0μm ⑦ L/S=2.1μm/1.9μm ⑧ L/S=2.2μm/1.8μm ⑨ L/S=2.3μm/1.7μm ⑩ L/S=1.8μm/2.2μm *interdigital pattern length：2mm Wiring pattern for break check 3.0μm, 2.5μm, 2.0μm, 1.8μm (length: 2.0mm, 1.0mm)