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MB6020

MB6020

MB6020

Chip Structure

Base Layer : P-TEOS*
Metal Layer : TiN / AI-0.5%Cu
Passivation Layer : HDP* / P-SiN

*TEOS : Tetraethoxysilane
*HDP : High Density Plasma

Specifications	MB6020-0102JY
Wafer Size	8 inch
Wafer Thickness	725±25μm
Chip Size	3.0mm ♦
Pad Pitch	60/55/50/45/40/35/30/25/20μm
Function	Daisy Chain
Bump Size	-
Bump Height	-
Pad Size	(57×110μm) (52×110μm) (47×110μm) (42×110μm) (37×110μm) (32×110μm) (27×110μm) (22×110μm) (17×110μm)
Passivation Opening	(53×100μm) (48×100μm) (43×100μm) (38×100μm) (33×100μm) (28×100μm) (23×100μm) (18×100μm) (13×100μm)
Number of Pad	(40x4) (40x4) (38x4) (38x4) (36x4) (34x4) (30x4) (26x4) (18x4)
Number of Chip	3016 chips/wafer
Polyimide (Option)	-
Evaluation KIT	-
	♦ Bottom Side