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WALTS-TEG HBM_T-0100JY




Wafer Size 8 inch
Wafer Thickness 725±25µm
Chip Size 10.0mm×8.0mm
Pad Pitch ① 35μm×40μm(I/O area)
② 90μm x 160µm(Staggerd area)
Function Daisy Chain
Electrode Cu pillar
Pad SIze ① 27μm■ ② 27μm■ 
Passivation Opening ① 8μm● ② 8μm●
Bump Size ① 18μm● ② 18μm● ③ 18µm●
Number of Pad ①7200 pads(I/O area) ②6544 pads(Staggerd area)
Number of Bump 7200 bamps(I/O area) ②6544 bamps(Staggerd area)
③912 bamps(Dummy bump area)
Scribe Width 120μm
Number of Chip 312 chips/wafer