Chip Structure
- MB130
- Base Layer : P-TEOS*
- Metal Layer : TiW/ AI-1.0%Si-0.5%Cu
- Passivation Layer : P-TEOS* / P-SiN (option) Polyimide
- MB130A
- Base Layer : P-TEOS*
- Metal Layer : Ti / TiN / AI-1.0%Si-0.5%Cu
- Passivation Layer : P-TEOS* / P-SiN (option) Polyimide
*TEOS : Tetraethoxysilane
Specifications | MB130 (Type-A) | MB130 (TYPE-B) | MB130A |
Wafer Size | 6 inch | 6 inch | 8 inch |
Wafer Thickness | 550±25μm | 550±25μm | 725±25μm |
Chip Size | 2.13mm ♦ | 2.13mm ♦ | 2.13mm ♦ |
Pad pitch | 130μm | 130μm | 130μm |
Metal Thickness | 0.8μm | 0.8μm | 1μm or 2μm or 3μm |
Function | Daisy Chain | Daisy Chain | Daisy Chain |
Pad config | Peripheral | Peripheral | Peripheral |
Electrode | Wire Bonding Au Stud Bump |
Cu Pillar Bump | Wire Bonding Au Stud Bump |
Pad Size | 100μm ♦ | 100μm ♦ | 100μm ♦ |
Passivation opening | 80μm ♦ | 80μm ♦ | 80μm ♦ |
Polyimide opening | 80μm ♦ | 80μm ♦ | 90μm ♦ |
Bump Size | - | 70μm ♦ | - |
Scribe width | 50μm | 50μm | 60μm |
Number of Pad | 108 pads/chip 15pads×4 (Outer line) 12pads×4 (Inner line) |
108 pads/chip 15pads×4 (Outer line) 12pads×4 (Inner line) |
108 pads/chip 15pads×4 (Outer line) 12pads×4 (Inner line) |
Number of Chip | 3300 chips/wafer | 3300 chips/wafer | 6060 chips/wafer |
♦ Bottom Side |