Chip Structure
- MB130
- Base Layer : P-TEOS*
- Metal Layer : TiW/ AI-1.0%Si-0.5%Cu
- Passivation Layer : P-TEOS* / P-SiN (option) Polyimide
- MB130A
- Base Layer : P-TEOS*
- Metal Layer : Ti / TiN / AI-1.0%Si-0.5%Cu
- Passivation Layer : P-TEOS* / P-SiN (option) Polyimide
*TEOS : Tetraethoxysilane
| Specifications | MB130 (Type-A) | MB130 (TYPE-B) | MB130B |
| Wafer Size | 8 inch | 8 inch | 8 inch |
| Wafer Thickness | 725±25μm | 725±25μm | 725±25μm |
| Chip Size | 2.13mm ♦ | 2.13mm ♦ | 2.13mm ♦ |
| Pad pitch | 130μm | 130μm | 130μm |
| Metal Thickness | Al-Si-Cu 1μm or 2μm or 3μm |
Al-Si-Cu 1μm or 2μm or 3μm |
Al-Cu 3μm |
| Function | Daisy Chain | Daisy Chain | Daisy Chain |
| Pad config | Peripheral | Peripheral | Peripheral |
| Electrode | Wire Bonding Au Stud Bump |
Cu Bump | Wire Bonding Au Stud Bump |
| Pad Size | 100μm ♦ | 100μm ♦ | 100μm ♦ |
| Passivation opening | 80μm ♦ | 80μm ♦ | 80μm ♦ |
| Polyimide opening | 90μm ♦ | 90μm ♦ | 90μm ♦ |
| Bump Size | - | 70μm ♦ | - |
| Scribe width | 60μm | 60μm | 60μm |
| Number of Pad | 108 pads/chip 15pads×4 (Outer line) 12pads×4 (Inner line) |
108 pads/chip 15pads×4 (Outer line) 12pads×4 (Inner line) |
108 pads/chip 15pads×4 (Outer line) 12pads×4 (Inner line) |
| Number of Chip | 6060 chips/wafer | 6060 chips/wafer | 6060 chips/wafer |
| ♦ Bottom Side |
