Practical Components -TEG FC120JY
Chip Structure
- Base Layer : P-TEOS
- Metal layer : TiN / Al-0.5%Cu
- Passivation Layer : HDP / P-SiN
(option) Polyimide
*TEOS : Tetraethoxysilane
*HDP : High Density Plasma
| Specifications | |
| TYPE | B |
| Wafer Thickness | 725±25μm |
| Wafer Size | 8 inch |
| Chip Size | 10.0mm |
| Bump Pitch | 120μm |
| Function | Daisy Chain |
| Pad Config | Area |
| Electrode | Cu Pillar |
| Pad Size | 80μm |
| Passivation Opening | φ20μm |
| Polyimide Opening | φ40μm |
| UBM Size | φ65μm |
| Bump Size | φ60μm |
| Scribe Width | 100μm |
| Number of Pad | 5776pads/chip(76x76) |
| Number of Chip | 208 chips/wafer |
